SSG4639STM p-ch enhancement mode power mosfet -14 a, -30 v, r ds(on) 8.5 m ? elektronische bauelemente 13-may-2010 rev. b page 1 of 5 http://www.secosgmbh.com/ any changes of specification will not be informed individually. a h b m d c j k f l e n g features ? super high dense cell design for low r ds (on). ? rugged and reliable. ? surface mount package. ? esd protected. product summary product summary v dss (v) r ds (on) m( ? ? i d (a) -30 8.5@v gs = -10v -14 13@v gs = -4.5v marking maximum ratings (t a = 25 c unless otherwise specified) parameter symbol ratings unit drain-source voltage v ds -30 v gate-source voltage v gs 20 v continuous drain current a i d @ t a = 25c -14 a i d @ t a = 70c -11.2 a pulsed drain current b i dm -79 a single pulse avalanche energy d e as 180 mj maximum power dissipation a p d @ t a = 25c 2.5 w p d @ t a = 70c 1.6 w operating junction & stor age temperature range t j , t stg -55 ~ 150 c thermal resistance ratings thermal resistance junction-ambient a r ja 50 c / w ref. millimete r ref. millimete r min. max. min. max. a 5.80 6.20 h 0.35 0.49 b 4.80 5.00 j 0.375 ref. c 3.80 4.00 k 45 d 0 8 l 1.35 1.75 e 0.40 0.90 m 0.10 0.25 f 0.19 0.25 n 0.25 ref. g 1.27 typ. stm4639 ????? ?? 1 s s s g d d d d ? = date code 2 3 4 5 6 7 8 sop-8
SSG4639STM p-ch enhancement mode power mosfet -14 a, -30 v, r ds(on) 8.5 m ? elektronische bauelemente 13-may-2010 rev. b page 2 of 5 http://www.secosgmbh.com/ any changes of specification will not be informed individually. electrical characteristics (t a = 25 c unless otherwise specified) parameter symbol min. typ. max. unit test conditions off characteristics drain-source breakdown voltage bv dss -30 - - v v gs =0v, i d =250 a zero gate voltage drain current i dss - - -1 a v ds = -24v, v gs =0v gate-body leakage current i gss - - 10 a v gs =20v, v ds =0v on characteristics gate threshold voltage v gs(th) -0.8 -1.7 -2.0 v v ds = v gs , i d =-250 a drain-source on-state resistance r ds(on) - 7 8.5 m ? v gs =-10v, i d =-14a - 9.8 13 v gs =-4.5v, i d =-11.3a forward transconductance g fs - 32 - s v ds =-10v, i d =-14a dynamic characteristics c input capacitance c iss - 4049 - pf v ds =-15v, v gs =0v, f=1.0mhz output capacitance c oss - 641 - reverse transfer capacitance c rss - 351 - switching characteristics c turn-on delay time t d(on) - 24 - ns v dd =-15v i d =-1a v gs =-10v r gen =3 ? rise time t r - 68 - turn-off delay time t d(off) - 484 - fall time t f - 188 - total gate charge q g - 95 - nc v ds =-15v, i d =-14a, v gs =-10v - 40 - v ds =-15v, i d =-14a, v gs =-4.5v gate-source charge q gs - 6 - v ds =-15v, i d =-14a, v gs =-10v gate-drain charge q gd - 23 - drain-source diode characteristics and maximum ratings maximum continuius drain-source diode forward current i s - - -2.0 a diode forward voltage b v sd - -0.7 -1.2 v v gs =0v, i s =-2.0a notes a. surface mounted on fr4 board, t Q 10 sec. b. pulse test pulse width Q 300 s, duty cycle Q 2 . c. guaranteed by design, not subject to production testing. d. starting t j =25c, l=3.0mh, v dd =30v, v gs =10v. (see figure13)
SSG4639STM p-ch enhancement mode power mosfet -14 a, -30 v, r ds(on) 8.5 m ? elektronische bauelemente 13-may-2010 rev. b page 3 of 5 http://www.secosgmbh.com/ any changes of specification will not be informed individually. characteristic curve
SSG4639STM p-ch enhancement mode power mosfet -14 a, -30 v, r ds(on) 8.5 m ? elektronische bauelemente 13-may-2010 rev. b page 4 of 5 http://www.secosgmbh.com/ any changes of specification will not be informed individually. characteristic curve
SSG4639STM p-ch enhancement mode power mosfet -14 a, -30 v, r ds(on) 8.5 m ? elektronische bauelemente 13-may-2010 rev. b page 5 of 5 http://www.secosgmbh.com/ any changes of specification will not be informed individually. characteristic curve
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